 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| STP60NF03L N-channel 30V - 0.008 - 60A TO-220 STripFETTM Power MOSFET General features Type STP60NF03L VDSS 30V RDS(on) <0.01 ID 60A Low threshold drive 3 1 2 Description This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. TO-220 Internal schematic diagram Applications Switching application Order codes Part number STP60NF03L Marking P60NF03L Package TO-220 Packaging Tube August 2006 Rev 4 1/12 www.st.com 12 Contents STP60NF03L Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 4 5 Test circuit ................................................ 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 STP60NF03L Electrical ratings 1 Electrical ratings Table 1. Symbol VGS VDGR VGS ID ID IDM (1) Absolute maximum ratings Parameter Gate-source voltage Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain current (continuous) at TC = 25C Drain current (continuous) at TC=100C Drain current (pulsed) Total dissipation at TC = 25C Derating factor Value 30 30 20 60 42 240 100 0.67 650 175 -65 to 175 Unit V V V A A A W W/C mJ C PTOT (2) EAS Single pulse avalanche energy Operating junction temperature Storage temperature TJ Tstg 1. Pulse width limited by safe operating area 2. Starting Tj = 25C, ID = 30A, VDD = 20V Table 2. Rthj-case Rthj-a Rthc-sink Tl Thermal data Thermal resistance junction-case Max Thermal resistance junction-ambient Max Thermal resistance case-sink typ Maximum lead temperature for soldering purpose 1.5 62.5 0.5 300 C/W C/W C/W C 3/12 Electrical characteristics STP60NF03L 2 Electrical characteristics (TCASE=25C unless otherwise specified) Table 3. Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) On/off states Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 250 A, VGS= 0 VDS = Max rating, VDS = Max rating @125C VGS = 20V VDS= VGS, ID = 250A VGS= 10V, ID= 30A VGS= 4.5V, ID= 30A 1 1.5 Min. 30 1 10 100 Typ. Max. Unit V A A nA V 2.5 0.008 0.010 0.0095 0.015 Table 4. Symbol gfs (1) Ciss Coss Crss td(on) tr Qg Qgs Qgd Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on Delay Time Rise Time Total gate charge Gate-source charge Gate-drain charge Test conditions VDS > ID(on) x RDS(on)max, ID = 30A VDS =25V, f=1 MHz, VGS=0 VDD = 15V, ID = 30A, RG = 4.7, VGS = 4.5V (see Figure 12) VDD=24V, ID = 60A VGS =5V Min. Typ. 60 2550 630 215 40 250 43 12 21 58 Max. Unit S pF pF pF ns ns nC nC nC 1. Pulsed: pulse duration=300s, duty cycle 1.5% 4/12 STP60NF03L Electrical characteristics Table 5. Symbol ISD ISDM(1) VSD(2) trr Qrr IRRM Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD=60A, VGS=0 ISD=60A, di/dt = 100A/s, VDD=15V, Tj=150C (see Figure 14) 75 100 2.6 Test conditions Min Typ. Max 60 240 1.5 Unit A A V ns C A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300s, duty cycle 1.5% 5/12 Electrical characteristics STP60NF03L 2.1 Figure 1. Electrical characteristics (curves) Safe operating area Figure 2. Thermal impedance Figure 3. Output characterisics Figure 4. Transfer characteristics Figure 5. Transconductance Figure 6. Static drain-source on resistance 6/12 STP60NF03L Figure 7. Gate charge vs gate-source voltage Figure 8. Electrical characteristics Capacitance variations Figure 9. Normalized gate threshold voltage vs temperature Figure 10. Normalized on resistance vs temperature Figure 11. Source-drain diode forward characteristics 7/12 Test circuit STP60NF03L 3 Test circuit Figure 13. Gate charge test circuit Figure 12. Switching times test circuit for resistive load Figure 14. Test circuit for inductive load Figure 15. Unclamped Inductive load test switching and diode recovery times circuit Figure 16. Unclamped inductive waveform Figure 17. Switching time waveform 8/12 STP60NF03L Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 9/12 Package mechanical data STP60NF03L TO-220 MECHANICAL DATA DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154 oP Q 10/12 STP60NF03L Revision history 5 Revision history Table 6. Date 09-Sep-2004 09-Aug-2006 Revision history Revision 3 4 Complete document New template, no content change Changes 11/12 STP60NF03L Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 12/12 |
Price & Availability of STP60NF03L06
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |